Vertical Solar Blind Schottky Photodiode Based On Homoepitaxial Ga2O3 Thin Film

Keywords

Ge doped Ga O 2 3; Photo-voltaic diode; PMBE; Responsivity; Vertical Schottky photodiode

Abstract

High quality germanium doped β-Ga2O3 epitaxial film was grown by PMBE technique and fabricated into a vertical type Schottky photodiode with a Pt/nGa2O3/n+Ga2O3(010) structure. The photodiode exhibited excellent rectifying characteristics with a turn on voltage ∼ 1V and near zero bias leakage current ∼ 100 fA. The photoresponse measurement showed a true solar blind sensitivity with cutoff wavelength ∼260 nm and an out of band rejection ratio of ∼104. A maximum responsivity of 0.09 A/W at 230 nm was measured at zero bias, corresponding to an external quantum efficiency of ∼52 %. The time response of the photovoltaic diode is in the millisecond range and has no long-time decay component which is very common in the MSM photoconductive wide bandgap devices. The photodiode performance remains stable up to 300°C, suggesting its potential use for high temperature applications.

Publication Date

1-1-2017

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

10105

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.2260824

Socpus ID

85019613052 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85019613052

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