Novel Voltage Triggered Electrostatic Discharge (Esd) Detection Circuit
Abstract
A novel 2×VDD-tolerant electrostatic discharge (ESD) detection circuit which uses only low-voltage devices is proposed in a 0.18 um CMOS process. Under normal operating conditions, all the devices are free from over-stress voltage threat. Our proposed detection circuit achieves a high triggering efficiency with a much smaller footprint. Comparing with the RC based detection circuit, our proposed circuit is a voltage triggered detection circuit which is immune to false triggering under the fast power-up events. SPICE simulation is carried out to evaluate the detection circuit, and the simulation results suggest that the proposed circuit could be used as a reliable 2×VDD-tolerant I/O buffer.
Publication Date
10-5-2017
Publication Title
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume
2017-July
Number of Pages
1-4
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IPFA.2017.8060071
Copyright Status
Unknown
Socpus ID
85045069069 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85045069069
STARS Citation
Liang, Wei; Yang, Zhaonian; Dong, Aihua; Li, Hang; and Sundaram, Kalpathy B., "Novel Voltage Triggered Electrostatic Discharge (Esd) Detection Circuit" (2017). Scopus Export 2015-2019. 6596.
https://stars.library.ucf.edu/scopus2015/6596