Title
Blue And Red Shifted, Partially Intermixed Ingaasp Quantum Well Semiconductor Laser Diodes
Keywords
Blue; Fabrication; Intermixing; Laser diodes; Red shift; Slope efficiency
Abstract
nGaAsP quantum well structures are intermixed to varying degrees when rapidly annealed at elevated temperatures while capped with films of SiNx, and SiOyNx of different compositions. Laser diodes are fabricated with both blue and red shifted samples and their performances are reported.
Publication Date
11-20-2017
Publication Title
30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume
2017-January
Number of Pages
113-114
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IPCon.2017.8116028
Copyright Status
Unknown
Socpus ID
85043514575 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85043514575
STARS Citation
Tabbakh, Thamer and LiKamWa, Patrick, "Blue And Red Shifted, Partially Intermixed Ingaasp Quantum Well Semiconductor Laser Diodes" (2017). Scopus Export 2015-2019. 6937.
https://stars.library.ucf.edu/scopus2015/6937