Blue And Red Shifted, Partially Intermixed Ingaasp Quantum Well Semiconductor Laser Diodes

Keywords

Blue; Fabrication; Intermixing; Laser diodes; Red shift; Slope efficiency

Abstract

nGaAsP quantum well structures are intermixed to varying degrees when rapidly annealed at elevated temperatures while capped with films of SiNx, and SiOyNx of different compositions. Laser diodes are fabricated with both blue and red shifted samples and their performances are reported.

Publication Date

11-20-2017

Publication Title

30th Annual Conference of the IEEE Photonics Society, IPC 2017

Volume

2017-January

Number of Pages

113-114

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/IPCon.2017.8116028

Socpus ID

85043514575 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85043514575

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