Optical Loss Analysis Of Silicon Solar Cells Using Spatial Resolved Quantum Efficiency And Reflectance Measurements
Abstract
IQE data has long been a key analysis tool for c-Si cell research. Transitioning from single point measurements to spatially resolved measurements allows for the detailed analysis of quality and uniformity of the processes and materials used in cell manufacturing. This work explores how spatially resolved reflectance data can be analyzed to provide valuable information regarding the front surface texturing, rear surface properties, and ARC properties of completed solar cells.
Publication Date
1-1-2017
Publication Title
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Number of Pages
2385-2387
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PVSC.2017.8366583
Copyright Status
Unknown
Socpus ID
85048482796 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85048482796
STARS Citation
Schneller, Eric J.; Davis, Kristopher O.; Ogutman, Kortan; and Schoenfeld, Winston V., "Optical Loss Analysis Of Silicon Solar Cells Using Spatial Resolved Quantum Efficiency And Reflectance Measurements" (2017). Scopus Export 2015-2019. 7093.
https://stars.library.ucf.edu/scopus2015/7093