Title
Rf Energy Harvesting Using Emerging Tfet Technology
Abstract
Radio frequency (RF) energy harvesting circuit using a 20 nm InAs double-gate n-channel TFET has been studied. RF-DC converter using a two-stage cross-coupled rectifier is evaluated. Rectifier power conversion efficiency (PCE) at low input power using TFET shows noticeably better performance compared to its CMOS counterpart. Temperature sensitivity and threshold voltage variation effects on PCE are also examined.
Publication Date
7-31-2017
Publication Title
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
Number of Pages
49-52
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/ICSICT.2016.7998836
Copyright Status
Unknown
Socpus ID
85028656910 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85028656910
STARS Citation
Yuan, Jiann Shiun and Kritchanchai, Ekavut, "Rf Energy Harvesting Using Emerging Tfet Technology" (2017). Scopus Export 2015-2019. 7422.
https://stars.library.ucf.edu/scopus2015/7422