Rf Energy Harvesting Using Emerging Tfet Technology

Abstract

Radio frequency (RF) energy harvesting circuit using a 20 nm InAs double-gate n-channel TFET has been studied. RF-DC converter using a two-stage cross-coupled rectifier is evaluated. Rectifier power conversion efficiency (PCE) at low input power using TFET shows noticeably better performance compared to its CMOS counterpart. Temperature sensitivity and threshold voltage variation effects on PCE are also examined.

Publication Date

7-31-2017

Publication Title

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Number of Pages

49-52

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ICSICT.2016.7998836

Socpus ID

85028656910 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85028656910

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