Energy Efficient In-Memory Binary Deep Neural Network Accelerator With Dual-Mode Sot-Mram
Keywords
Convolutional Neural Network; In-memory computing; SOT-MRAM
Abstract
In this paper, we explore potentials of leveraging spin-based in-memory computing platform as an accelerator for Binary Convolutional Neural Networks (BCNN). Such platform can implement the dominant convolution computation based on presented Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) array. The proposed array architecture could simultaneously work as non-volatile memory and a reconfigurable in-memory logic (AND, OR) without add-on logic circuits to memory chip as in conventional logic-in-memory designs. The computed logic output could be also simply read out like a normal MRAM bit-cell using the shared memory peripheral circuits. We employ such intrinsic in-memory computing architecture to efficiently process data within memory to greatly reduce power hungry and omit long distance data communication concerning state-of-the-art BCNN hardware.
Publication Date
11-22-2017
Publication Title
Proceedings - 35th IEEE International Conference on Computer Design, ICCD 2017
Number of Pages
609-612
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/ICCD.2017.107
Copyright Status
Unknown
Socpus ID
85041692629 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85041692629
STARS Citation
Fan, Deliang and Angizi, Shaahin, "Energy Efficient In-Memory Binary Deep Neural Network Accelerator With Dual-Mode Sot-Mram" (2017). Scopus Export 2015-2019. 7471.
https://stars.library.ucf.edu/scopus2015/7471