Title
Thermal Failure And Voltage Overshoot Models For Diode Behavior Under Electrostatic Discharge Stresses
Abstract
Diodes are simple but effective solution for Electrostatic Discharge (ESD) protection. In order to evaluate and simulate ESD robustness of diode protection schemes at circuit-level for integrated circuits, models of diode thermal failure and voltage overshoot for ESD simulation are proposed in this paper. These models are based on physical mechanisms of ESD events and device failure. According to simulation results, the models are shown to predict thermal failure and reproduce voltage overshoot phenomena under ESD stresses, respectively.
Publication Date
4-2-2018
Publication Title
2018 18th International Workshop on Junction Technology, IWJT 2018
Volume
2018-January
Number of Pages
1-4
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IWJT.2018.8330308
Copyright Status
Unknown
Socpus ID
85049729411 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85049729411
STARS Citation
Li, Hang; Zhou, Yuanzhong; Miao, Meng; Salcedo, Javier A.; and Hajjar, Jean Jacques, "Thermal Failure And Voltage Overshoot Models For Diode Behavior Under Electrostatic Discharge Stresses" (2018). Scopus Export 2015-2019. 7570.
https://stars.library.ucf.edu/scopus2015/7570