Characterization Of Dielectric Breakdown And Lifetime Analysis For Silicon Nitride Metal-Insulator-Metal Capacitors Under Electrostatic Discharge Stresses

Keywords

Breakdown Voltage; ESD; Metal-insulator-metal (MIM) Capacitor; Silicon Nitride (SiN); Time Dependent Dielectric Breakdown (TDDB)

Abstract

Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN integrated circuits and integrated passive devices (IPD). To analyze the dielectric breakdown mechanisms and predict the lifetime of SiN MIMCAPs under electrostatic discharge (ESD) conditions, characteristics of MIMCAPs with different dimensions (dielectric thickness and area) and various ambient temperatures under ESD stresses are investigated. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) system and the Signatone S1060 heating module. Then, the breakdown voltage variation of MIMCAPs with respect to dimensions and temperatures under different types of transmission line pulsing (TLP) stresses is discussed. Furthermore, with the transformative version of power law employed, the lifetime (time dependent dielectric breakdown, TDDB) of MIMCAPs is analyzed.

Publication Date

8-30-2018

Publication Title

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volume

2018-July

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/IPFA.2018.8452538

Socpus ID

85053893601 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85053893601

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