Achieving The Intrinsic Limit Of Quality Factor In Vhf Extensional-Mode Block Resonators
Keywords
acoustic reflector; anchor Loss; piezoelectric on silicon resonators; quality factor
Abstract
In this work we demonstrate that it is possible to push the most dominant sources of extrinsic loss (i.e. anchor and air loss) in high-frequency thin-film piezoelectric-on-substrate (TPoS) MEMS resonator to levels that they no longer limit the overall Q. This is achieved through altering the substrate regions around the resonators, etching notch and reflector structures, so that the resulted acoustic cavity is virtually not leaking acoustic energy once the resonator is operated in vacuum. We experimentally prove our technique by presenting an 1100% improvement in Q for a TPoS resonator operating at ~82 MHz and achieving an f\times Q of 2.6\times 10^{12}.
Publication Date
12-31-2018
Publication Title
IFCS 2018 - IEEE International Frequency Control Symposium
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/FCS.2018.8597472
Copyright Status
Unknown
Socpus ID
85061814467 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85061814467
STARS Citation
Mansoorzare, Hakhamanesh; Moradian, Sina; Shahraini, Sarah; Abdolvand, Reza; and Gonzales, Jonathan, "Achieving The Intrinsic Limit Of Quality Factor In Vhf Extensional-Mode Block Resonators" (2018). Scopus Export 2015-2019. 7600.
https://stars.library.ucf.edu/scopus2015/7600