Inp-Based Quantum Cascade Lasers Monolithically Integrated Onto Si And Gaas Substrates

Creator

R. Go, University of Central Florida
H. Krysiak, IQE plc
M. Fetters, IQE plc
P. Figueiredo, University of Central Florida
M. Suttinger, University of Central Florida

Abstract

Operation of InP-based quantum cascade lasers (QCL) processed from structures grown on 6-inch Si and GaAs substrates with metamorphic buffers are reported. Results pave the way for the development of ultra-compact Si-based platforms comprising QcLs.

Publication Date

8-6-2018

Publication Title

2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Copyright Status

Unknown

Socpus ID

85052575945 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85052575945

STARS Citation

Go, R.; Krysiak, H.; Fetters, M.; Figueiredo, P.; and Suttinger, M., "Inp-Based Quantum Cascade Lasers Monolithically Integrated Onto Si And Gaas Substrates" (2018). Scopus Export 2015-2019. 7814.
https://stars.library.ucf.edu/scopus2015/7814