Inp-Based Quantum Cascade Lasers Monolithically Integrated Onto Si And Gaas Substrates

Creator

R. Go, University of Central Florida
H. Krysiak, IQE plc
M. Fetters, IQE plc
P. Figueiredo, University of Central Florida
M. Suttinger, University of Central Florida

Abstract

Operation of InP-based quantum cascade lasers (QCL) processed from structures grown on 6-inch Si and GaAs substrates with metamorphic buffers are reported. Results pave the way for the development of ultra-compact Si-based platforms comprising QCLs.

Publication Date

1-1-2018

Publication Title

Optics InfoBase Conference Papers

Volume

Part F94-CLEO_SI 2018

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/CLEO_SI.2018.SF2G.4

Copyright Status

Unknown

Socpus ID

85048975078 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85048975078

STARS Citation

Go, R.; Krysiak, H.; Fetters, M.; Figueiredo, P.; and Suttinger, M., "Inp-Based Quantum Cascade Lasers Monolithically Integrated Onto Si And Gaas Substrates" (2018). Scopus Export 2015-2019. 8080.
https://stars.library.ucf.edu/scopus2015/8080