Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors
Abbreviated Journal Title
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
This paper develops a comprehensive and two-dimensional model for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The model takes into account the electrical-thermal interacting mechanism in both the width and length directions of the HBT emitter finger and thus is capable of describing the two-dimensional temperature and current distributions in the emitter finger of the HBT. Results produced from a three-dimensional device simulator are also included in support of the model. Copyright (C) 1996 Elsevier Science Ltd
"Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors" (1996). Faculty Bibliography 1990s. 1819.