Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors

    Authors

    W. Zhou; S. Sheu; J. J. Liou;C. I. Huang

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    This paper develops a comprehensive and two-dimensional model for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The model takes into account the electrical-thermal interacting mechanism in both the width and length directions of the HBT emitter finger and thus is capable of describing the two-dimensional temperature and current distributions in the emitter finger of the HBT. Results produced from a three-dimensional device simulator are also included in support of the model. Copyright (C) 1996 Elsevier Science Ltd

    Journal Title

    Solid-State Electronics

    Volume

    39

    Issue/Number

    12

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    1709

    Last Page

    1721

    WOS Identifier

    WOS:A1996UV48000047

    ISSN

    0038-1101

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