Title
Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors
Abbreviated Journal Title
Solid-State Electron.
Keywords
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
This paper develops a comprehensive and two-dimensional model for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The model takes into account the electrical-thermal interacting mechanism in both the width and length directions of the HBT emitter finger and thus is capable of describing the two-dimensional temperature and current distributions in the emitter finger of the HBT. Results produced from a three-dimensional device simulator are also included in support of the model. Copyright (C) 1996 Elsevier Science Ltd
Journal Title
Solid-State Electronics
Volume
39
Issue/Number
12
Publication Date
1-1-1996
Document Type
Article
Language
English
First Page
1709
Last Page
1721
WOS Identifier
ISSN
0038-1101
Recommended Citation
"Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors" (1996). Faculty Bibliography 1990s. 1819.
https://stars.library.ucf.edu/facultybib1990/1819
Comments
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