Title

Studies of minority carrier diffusion length increase in p-type ZnO : Sb

Authors

Authors

O. Lopatiuk-Tirpak; L. Chernyak; F. X. Xiu; J. L. Liu; S. Jang; F. Ren; S. J. Pearton; K. Gartsman; Y. Feldman; A. Osinsky;P. Chow

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

THIN-FILMS; PHOSPHORUS; Physics, Applied

Abstract

Minority electron diffusion length was measured in p-type, Sb-doped ZnO as a function of temperature using the electron beam induced current technique. A thermally induced increase of electron diffusion length was determined to have an activation energy of 184 +/- 10 meV. Irradiation with a low energy (5 kV) electron beam also resulted in an increase of diffusion length with a similar activation energy (219 +/- 8 meV). Both phenomena are suggested to involve a Sb-Zn-2V(Zn) acceptor complex. Saturation and relaxation dynamics of minority carrier diffusion length are explored. Details of a possible mechanism for diffusion length increase are presented. (c) 2006 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

100

Issue/Number

8

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000241721900125

ISSN

0021-8979

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