Studies of minority carrier transport in ZnO
Abbreviated Journal Title
ZnO; minority carrier diffusion length; cathodoluminescence; electron; irradiation; TEMPERATURE-DEPENDENCE; DOPED GAN; ELECTRON; Physics, Condensed Matter
The temperature dependence of the minority carrier diffusion length and lifetime in bulk n-type ZnO was studied using Electron-Beam-Induced Current (EBIC) and cathodoluminescence (CL) techniques. The diffusion length was observed to increase exponentially over the temperature range from 25 to 125 degrees C, yielding an activation energy of 45 +/- 2 meV A concomitant decrease of the cathodoluminescence intensity for the near-band-edge transition was also observed. The activation energy determined by optical measurements was 58 +/- 7 meV. The larger minority carrier diffusion length and smaller luminescence intensity are attributed to the increased lifetime of non-equilibrium holes in the valence band at elevated temperatures. Carrier trapping on Li-related levels with activation energy 283 +/- 9 meV is also addressed. (c) 2007 Elsevier Ltd. All rights reserved.
Superlattices and Microstructures
Article; Proceedings Paper
"Studies of minority carrier transport in ZnO" (2007). Faculty Bibliography 2000s. 7370.