Keywords

Field effect transistors, Hot carriers, Modulation doped field effect transistors, Reliability (Engineering)

Abstract

A unified study on the hot carrier reliability of the Pseudomorphic High Electron Mobility Transistor (PHEMT) is carried out through Sentaurus Device Simulation, measurement, and physical analyses. A trade study of devices with four various geometries are evaluated for DC and RF performance. The trade-off of DC I-V characteristics, transconductance, and RF parameters versus hot carrier induced gate current is assessed for each device. Ambient temperature variation is also evaluated to observe its impact on hot carrier effects. A commercial grade PHEMT is then evaluated and measured to demonstrate the performance degradation that occurs after a period of operation in an accelerated stress regime— one hour of high drain voltage, low drain current stress. This stress regime and normal operation regime are then modeled through Sentaurus. Output characteristics are shown along with stress mechanisms within the device. Lastly, a means of simulating a PHEMT post-stress is introduced. The approach taken accounts for the activation of dopants near the channel. Post-stress simulation results of DC and RF performance are then investigated.

Notes

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Graduation Date

2011

Semester

Summer

Advisor

Yuan, Jiann S.

Degree

Master of Science (M.S.)

College

College of Engineering and Computer Science

Department

Electrical Engineering and Computer Science

Format

application/pdf

Identifier

CFE0003994

URL

http://purl.fcla.edu/fcla/etd/CFE0003994

Language

English

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Subjects

Dissertations, Academic -- Engineering and Computer Science, Engineering and Computer Science -- Dissertations, Academic

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