Keywords
ion implantation, silicon, SIMS
Abstract
Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.
Graduation Date
2007
Semester
Fall
Advisor
An, Linan
Degree
Master of Science (M.S.)
College
College of Engineering and Computer Science
Department
Mechanical, Materials, and Aerospace Engineering
Degree Program
Materials Science and Engineering
Format
application/pdf
Identifier
CFE0001909
URL
http://purl.fcla.edu/fcla/etd/CFE0001909
Language
English
Release Date
12-1-2007
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
STARS Citation
Shunmugavelu, Arun Kumar, "Redistribution Of Manganese Ion Implanted In Silicon" (2007). Electronic Theses and Dissertations. 3348.
https://stars.library.ucf.edu/etd/3348