Keywords
GaN, ZnO, minority carrier, diffusion length, lifetime, electron traps, deep acceptors
Abstract
Minority carrier transport properties and the effects of electron irradiation/injection were studied in GaN and ZnO containing dopants known to form acceptor states deep within the materials' bandgap. Minority carrier diffusion length and lifetime changes were investigated using Electron Beam Induced Current (EBIC) method, cathodoluminescence spectroscopy, spectral photoresponse and persistent photoconductivity measurements. It is shown that electron irradiation by the beam of a scanning electron microscope results in a significant increase of minority carrier diffusion length. These findings are supported by the cathodoluminescence measurements that demonstrate the decay of near-band-edge intensity as a consequence of increasing carrier lifetime under continuous irradiation by the electron beam. Temperature-dependent measurements were used to determine the activation energies for the electron irradiation-induced effects. The latter energies were found to be consistent with the involvement of deep acceptor states. Based on these findings, the effects of electron irradiation are explained via the mechanism involving carrier trapping on these levels. Solid-state electron injection was also shown to result in a similar increase of minority carrier lifetime and diffusion length. Solid-state injection was carried out by applying the forward bias to a ZnO homojunction and resulted in a significant improvement of the peak photoresponse of the junction. This improvement was unambiguously correlated with the increase of the minority carrier diffusion length due to electron injection.
Notes
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Graduation Date
2007
Semester
Summer
Advisor
Chernyak, Leonid
Degree
Doctor of Philosophy (Ph.D.)
College
College of Sciences
Department
Physics
Degree Program
Physics
Format
application/pdf
Identifier
CFE0001710
URL
http://purl.fcla.edu/fcla/etd/CFE0001710
Language
English
Release Date
September 2007
Length of Campus-only Access
None
Access Status
Doctoral Dissertation (Open Access)
STARS Citation
Tirpak, Olena, "Influence Of Electron Trapping On Minority Carrier Transport Properties Of Wide Band Gap Semiconductors" (2007). Electronic Theses and Dissertations. 3386.
https://stars.library.ucf.edu/etd/3386