Keywords
Electronics Packaging, Power Module, High Temperature Electronics, Hybrid Electric Vehicle, Motor Control
Abstract
Currently, wide bandgap semiconductor devices feature increased efficiency, higher current handling capabilities, and higher reverse blocking voltages than silicon devices while recent fabrication advances have them drawing near to the marketplace. However these new semiconductors are in need of new packaging that will allow for their application in several important uses including hybrid electrical vehicles, new and existing energy sources, and increased efficiency in multiple new and existing technologies. Also, current power module designs for silicon devices are rife with problems that must be enhanced to improve reliability. This thesis introduces new packaging that is thermally resilient and has reduced mechanical stress from temperature rise that also provides increased circuit lifetime and greater reliability for continued use to 300°C which is within operation ratings of these new semiconductors. The new module is also without problematic wirebonds that lead to a majority of traditional module failures which also introduce parasitic inductance and increase thermal resistance. Resultantly, the module also features a severely reduced form factor in mass and volume.
Notes
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Graduation Date
2008
Advisor
Shen, Zheng (John)
Degree
Master of Science in Electrical Engineering (M.S.E.E.)
College
College of Engineering and Computer Science
Department
Electrical Engineering and Computer Science
Degree Program
Electrical Engineering
Format
application/pdf
Identifier
CFE0002482
URL
http://purl.fcla.edu/fcla/etd/CFE0002482
Language
English
Release Date
December 2008
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
STARS Citation
Grummel, Brian, "High Temperature Packaging For Wide Bandgap Semiconductor Devices" (2008). Electronic Theses and Dissertations. 3583.
https://stars.library.ucf.edu/etd/3583