Keywords

HEMT, Plasmon, THz, 2deg, InGaAs/InP, Heterostructure

Abstract

The observation of voltage-tunable plasmon resonances in the terahertz range in two dimensional electron gas (2-deg) of a high electron mobility transistor (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems is reported. The devices were fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography process and a semi-transparent gate contact that consisted of a 0.5 [micro]m period transmission grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the frequency range 10-100 cm-1. The resonance frequency depends on the gate voltage-tuned sheet-charge density of the 2deg. The fundamental and higher resonant harmonics were observed to shift towards lower frequencies with the implementation of negative gate bias. The theory of interaction of sub millimeter waves with 2deg through corrugated structure on top has been applied to calculate and understand the phenomena of resonant plasmon excitations. The observed separation of resonance fundamental from its harmonics and their shift with gate bias follows theory, although the absolute frequencies are lower by about a factor of 2-3 in InGaAs/InP system. However, calculated values match much better with AlGaN/GaN system.

Notes

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Graduation Date

2009

Advisor

Peale, Robert

Degree

Doctor of Philosophy (Ph.D.)

College

College of Sciences

Department

Physics

Degree Program

Physics

Format

application/pdf

Identifier

CFE0002912

URL

http://purl.fcla.edu/fcla/etd/CFE0002912

Language

English

Release Date

February 2010

Length of Campus-only Access

None

Access Status

Doctoral Dissertation (Open Access)

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