Keywords
radio frequency; low noise amplifier; hot carrier effect
Abstract
This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF simulator subject to these features. This thesis presents hot carrier induced degradation results of an LNA to show that the HCE phenomenon is one of the serious reliability issues in the aggressively scaled RF CMOS design, especially for long-term operation of these devices. The predicted degradation from simulation results can be used design reliable CMOS RF circuits.
Notes
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Graduation Date
2006
Semester
Spring
Advisor
Yuan, Jiann S.
Degree
Master of Science (M.S.)
College
College of Engineering and Computer Science
Department
Electrical and Computer Engineering
Degree Program
Electrical Engineering
Format
application/pdf
Identifier
CFE0000952
URL
http://purl.fcla.edu/fcla/etd/CFE0000952
Language
English
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
STARS Citation
Shen, Lin, "The Effect Of Hot Carrier Stress On Low Noise Amplifier Radio Frequency Performance Under Weak And Strong Inversion" (2006). Electronic Theses and Dissertations. 843.
https://stars.library.ucf.edu/etd/843