Evaluation of RF-stress effect on class-E MOS power-amplifier efficiency

    Authors

    J. S. Yuan;J. Ma

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    breakdown (BD); class-E power amplifier (PA); MOS devices; power; efficiency; RF stress; GATE-OXIDE BREAKDOWN; SOFT BREAKDOWN; PERFORMANCE; MODEL; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    RF-stress effects on MOS power-amplifier performance are studied. The class-E power-amplifier power efficiency as a function of breakdown (BD) location has been evaluated. The power efficiency degrades with gate-oxide RF stress due to increased gate leakage current and reduced output voltage. The degradation is enhanced when the BD location is closer to the drain side than the source side.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    55

    Issue/Number

    1

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    430

    Last Page

    434

    WOS Identifier

    WOS:000252059000045

    ISSN

    0018-9383

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