Abstract

Information processing is crucial in modern society, placing a great emphasis on the performance of optoelectronic devices to match ever increasing processing and memory needs. Within these devices, MoS2 has demonstrated great potential as transistors due to its enhanced electrostatic control. As increased layer thickness of quality MoS2 films have been shown to boost the performance of its transistors, growth parameters for the synthesis of ideally uniform and large area multilayered films via chemical vapor deposition were investigated. By increasing the flow pressure in the system and the growth time, increasing levels of thickness and nucleation density was shown for MoS2 growth. Although the scale of the growth was non-uniform in nature, films containing large areas of thicker MoS2 was achieved. The thickness of the films was confirmed by Raman and photoluminescence measurements by confirming their values with exfoliated MoS2 measurements.

Thesis Completion

2022

Semester

Summer

Thesis Chair/Advisor

Roy, Tania

Degree

Bachelor of Science (B.S.)

College

College of Engineering and Computer Science

Department

Materials Science and Engineering

Language

English

Access Status

Open Access

Release Date

8-15-2022

Restricted to the UCF community until 8-15-2022; it will then be open access.

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