Abstract
Neuromorphic computing comprises of systems that are based on the human brain or artificial neural networks, with the promise of creating a brain inspired ability to learn and adapt, but technical challenges, such as developing an accurate neuroscience model of the functionality of the brain to building devices to support these models, are significantly hindering the progress of neuromorphic systems. This has paved the way for artificial neural networks (ANN) to meet these criteria. The memristor has become an emerging candidate to realize ANN through emulation synapse and neuron behavior. In this work, we are fabricating an Ag/MoS2/Au threshold switching memristor (TSM), to emulate four critical behaviors of neurons - all-or-nothing spiking, threshold-driven firing, post firing refractory period and stimulus strength-based frequency response. We will also test the innate stochastic behavior of these devices to see if they are voltage dependent, making them a possible application in the integrate and fire neuron. Continuing to emulate biological synapses using memristors can help solve many optimization and machine learning problems, which in turn, can make electronics as energy-efficient as our brain.
Thesis Completion
2019
Semester
Fall
Thesis Chair/Advisor
Roy, Tania
Degree
Bachelor of Science in Electrical Engineering (B.S.E.E.)
College
College of Engineering and Computer Science
Department
Electrical and Computer Engineering
Degree Program
Electrical Engineering
Language
English
Access Status
Open Access
Release Date
12-1-2019
Recommended Citation
Manley, Madison, "Stochasticity in an Artificial Neuron using Ag/2D-MoS2/Au Threshold Switching Memristor" (2019). Honors Undergraduate Theses. 645.
https://stars.library.ucf.edu/honorstheses/645