Modeling the Heterojunction Bipolar Transistor for Computer Aided Simulation
The GaAs heterojunction bipolar transistor (HBT) is a relatively new device that has proven to operate faster, consume less power, operate over a wider temperature range and have a higher tolerance to radiation exposure than the silicon homojunction transistor. The growing acceptance of the GaAs HBT has prompted the need for an accurate analytical model of the device to perform simulations of GaAs HBT circuits. The presence of unequal barrier heights at the heterojunction allows for the high doping and narrowing of the base, which effectively increases both the gain and the cutoff frequency of the HBT. One major drawback of the HBT, however, is the presence of an offset voltage from the emitter to the collector. This voltage raises the output low voltage in saturating logic circuits which reduces the low noise margin and also increases the device power consumption, both undesirable traits. An analytical model for the collector-emitter offset voltage is developed, allowing for the isolating of the controlling parameters such that the offset voltage can be minimized and the device tradeoffs determined.
This item is only available in print in the UCF Libraries. If this is your thesis or dissertation, you can help us make it available online for use by researchers around the world by downloading and filling out the Internet Distribution Consent Agreement. You may also contact the project coordinator Kerri Bottorff for more information.
Liou, Juin J.
Master of Science (M.S.)
College of Engineering
Electrical Engineering and Communication Sciences
Length of Campus-only Access
Masters Thesis (Open Access)
Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic
Drafts, William A., "Modeling the Heterojunction Bipolar Transistor for Computer Aided Simulation" (1990). Retrospective Theses and Dissertations. 3975.