Title

Optimal Cmos Interconnect Width Design In Electromigration-Free Material

Abstract

An optimal width design for an electromigration-free interconnect in CMOS technology has been developed. The interconnect width is minimized to account for interconnect capacitance and electromigration effects. The analytical solution provides insights into interconnect and circuit sensitivities. Optimization of the interconnect width for a given maximum current density is presented. This technique offers a fast turn-around design time compared with iterative circuit simulations. © 1991 Taylor & Francis, Ltd.

Publication Date

1-1-1991

Publication Title

International Journal of Electronics

Volume

71

Issue

5

Number of Pages

771-779

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/00207219108925519

Socpus ID

0026261326 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026261326

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