Title
Two-Dimensional Lateral Bipolar Transistor Model For Circuit Simulation
Abstract
A lateral bipolar transistor circuit model including two-dimensional current characteristics has been developed. The model accounts for the physical effects of base width modulation, base conductivity modulation, hole-electron plasma-induced bandgap narrowing, and current-dependent base resistance. SPICE simulation employing the present model shows good agreement with computer experimental results. © 1991 Taylor & Francis Ltd.
Publication Date
1-1-1991
Publication Title
International Journal of Electronics
Volume
70
Issue
6
Number of Pages
1041-1048
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1080/00207219108921347
Copyright Status
Unknown
Socpus ID
0026171624 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0026171624
STARS Citation
Yuan, J. S., "Two-Dimensional Lateral Bipolar Transistor Model For Circuit Simulation" (1991). Scopus Export 1990s. 1373.
https://stars.library.ucf.edu/scopus1990/1373