Title

An Improved Early Voltage Model For Advanced Bipolar Transistors

Abstract

The Early voltage VA of a bipolar transistor is conventionally treated as bias-independent, thus neglecting the details about the effect of the two junction voltages on the base-width modulation, which results in VA. This effect becomes more prominent in advanced bipolar transistors because they possess very thin base regions. In this brief, a more accurate bias-dependent Early voltage model is developed. Early voltages calculated from the present model are found in good agreement with measured dependencies. SPICE simulation is also carried out in demonstrating the bias-dependent VA effects on small-signal performance of bipolar transistor integrated circuits. © 1991 IEEE

Publication Date

1-1-1991

Publication Title

IEEE Transactions on Electron Devices

Volume

38

Issue

1

Number of Pages

179-182

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.65753

Socpus ID

0025997774 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0025997774

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