Title
Integral gummel relation for single-A nd double-heterojunction graded-base BET's
Abstract
Integral Gummel charge-control relation for both linearly graded-A nd non-graded-base and for single or double-heterojunction bipolar transistors (HBT's) has been derived. In addition to modeling the collector current density for different heterojunction systems, the analytical model is useful for analyzing the collector offset voltage of the heterojunction bipolar transistor with and without graded energy gap in the base. Comparisons with numerical and experimental data show excellent agreement.
Publication Date
5-2-1994
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
2149
Number of Pages
238-247
Document Type
Article; Proceedings Paper
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.175262
Copyright Status
Unknown
Socpus ID
85076209422 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85076209422
STARS Citation
Yuan, J. S., "Integral gummel relation for single-A nd double-heterojunction graded-base BET's" (1994). Scopus Export 1990s. 160.
https://stars.library.ucf.edu/scopus1990/160