Title

An Analytical Insulated-Gate Bipolar Transistor (Igbt) Model For Steady-State And Transient Applications Under All Free-Carrier Injection Conditions

Abstract

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the steady-state and transient characteristics of such a device. The model is derived rigorously from the ambipolar transport equaion and is valid for all free-carrier injection conditions, rather than just for a special case (i.e. low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional simulator called MEDICI are also included in support of the model. Copyright © 1996 Elsevier Science Ltd.

Publication Date

1-1-1996

Publication Title

Solid-State Electronics

Volume

39

Issue

9

Number of Pages

1277-1282

Document Type

Review

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(96)00046-9

Socpus ID

0030242390 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0030242390

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