Title

Analytical Model For The Insulated-Gate Bipolar Transistor Under All Free-Carrier Injection Conditions

Abstract

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model.

Publication Date

1-1-1996

Publication Title

Conference Proceedings - IEEE SOUTHEASTCON

Number of Pages

432-435

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0029724448 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029724448

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