Title

A Comprehensive Study Of High-Level Free-Carrier Injection In Bipolar Junction Transistors

Keywords

Bipolar junction transistors; High-level injection; Semiconductor device modeling

Abstract

This paper presents a comprehensive study on the effects of high-level free-carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QNB. It is shown that high-level injection can create a large retarding field which is in the opposite direction of the built-in field associated with the nonuniform doping concentration. High-level injection also enhances recombination in the QNB, thus resulting in a position-dependent minority-carrier current in the region even if the base is thin. Our results further suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations.

Publication Date

1-1-1996

Publication Title

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volume

35

Issue

7

Number of Pages

3845-3851

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1143/jjap.35.3845

Socpus ID

0030191911 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0030191911

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