Title

Effects Of High-Level Free-Carrier Injection On The Base Transit Time Of Bipolar Junction Transistors

Abstract

This paper presents a detailed study on the effects of high-level free-carrier injection on the base transit time of bipolar junction transistors (BJTs). The results are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the quasi-neutral base (QNB). It is shown that high-level injection can create a large retarding field in the QNB which is in the opposite direction of the built-in field associated with the nonuniform doping concentration, thus increasing the base transit time. Our results further suggest that the widely used zero majority-carrier current approximation gives rise to a larger error compared to other lesser known approximations.

Publication Date

1-1-1996

Publication Title

Solid-State Electronics

Volume

39

Issue

1

Number of Pages

27-31

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(95)00098-E

Socpus ID

0029772289 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029772289

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