Title
Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability
Abstract
The long-term current instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is studied, and the physical mechanism contributing to such a behavior is investigated. Based on this, a model capable of predicting the HBT long-term current drift and mean time to failure (MTTF) is developed. In addition, such a model is implemented into SPICE circuit simulator, thus allowing the simulation of HBT circuits subjected to an electrical and thermal stress condition. © 1997 Elsevier Science Ltd.
Publication Date
1-1-1997
Publication Title
Microelectronics Reliability
Volume
37
Issue
10-11
Number of Pages
1643-1650
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/S0026-2714(97)00130-3
Copyright Status
Unknown
Socpus ID
0031251559 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031251559
STARS Citation
Liou, J. J. and Sheu, S. H., "Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability" (1997). Scopus Export 1990s. 2780.
https://stars.library.ucf.edu/scopus1990/2780