Title

Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability

Abstract

The long-term current instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is studied, and the physical mechanism contributing to such a behavior is investigated. Based on this, a model capable of predicting the HBT long-term current drift and mean time to failure (MTTF) is developed. In addition, such a model is implemented into SPICE circuit simulator, thus allowing the simulation of HBT circuits subjected to an electrical and thermal stress condition. © 1997 Elsevier Science Ltd.

Publication Date

1-1-1997

Publication Title

Microelectronics Reliability

Volume

37

Issue

10-11

Number of Pages

1643-1650

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0026-2714(97)00130-3

Socpus ID

0031251559 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031251559

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