Title
AlGaAs/GaAs heterojunction bipolar transistor reliability: Device modeling and SPICE simulation
Abstract
The physical mechanisms contributing to the reliability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) are investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e., burn-in test).
Publication Date
12-1-1997
Publication Title
Proceedings of the International Conference on Microelectronics
Volume
1
Number of Pages
223-228
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0031369120 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031369120
STARS Citation
Liou, J. J.; Sheu, S.; and Huang, C. I., "AlGaAs/GaAs heterojunction bipolar transistor reliability: Device modeling and SPICE simulation" (1997). Scopus Export 1990s. 3094.
https://stars.library.ucf.edu/scopus1990/3094