Title

Reliability Investigation Of Ingap/Gaas Hbts Under Current And Temperature Stress

Abstract

The reliability of InGaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping impurities namely Zn, Be and C. The effect of O+/H- and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device dc current gain. The instability phenomena typical of each factors and their effects on the HBT characteristics are reported. © 1999 Elsevier Science Ltd. All rights reserved.

Publication Date

12-17-1999

Publication Title

Microelectronics Reliability

Volume

39

Issue

12

Number of Pages

1809-1816

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0026-2714(99)00189-4

Socpus ID

6544271508 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/6544271508

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