Title
Avalanche Breakdown Effects On Aigaas/Gaas Hbt Performance
Abstract
The performance of heterojunction bipolar transistors operating in the avalanche breakdown regime has been evaluated. The analysis shows that AlGaAs/GaAs HBT under avalanche breakdown has higher collector-base junction capacitance, lower Early voltage, higher device noise, lower power efficiency, lower cut-off frequency, reduced device switching speed, and degraded maximum frequency of oscillation. © 1993 Taylor & Francis Ltd.
Publication Date
1-1-1993
Publication Title
International Journal of Electronics
Volume
74
Issue
6
Number of Pages
909-916
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1080/00207219308925892
Copyright Status
Unknown
Socpus ID
0027608937 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0027608937
STARS Citation
Yuan, Jiann S., "Avalanche Breakdown Effects On Aigaas/Gaas Hbt Performance" (1993). Scopus Export 1990s. 745.
https://stars.library.ucf.edu/scopus1990/745