Title
Modelling Of Gaas Mesfet Output Conductance And Transconductance Frequency Dispersion
Abstract
The output conductance and transconductance frequency dispersion phenomena of a GaAs MESFET have been modelled. A non-uniform temperature distribution between the substrate and surface channel is accounted for. Experimental data are used to justify the accuracy of the present model. Good agreement between the model prediction and measurement has been obtained. The output conductance and transconductance frequency dispersion has a significant impact in determining the small-signal voltage gain of a MESFET amplifier. © 1993 Taylor & Francis Ltd.
Publication Date
1-1-1993
Publication Title
International Journal of Electronics
Volume
74
Issue
1
Number of Pages
51-58
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1080/00207219308925812
Copyright Status
Unknown
Socpus ID
0027146730 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0027146730
STARS Citation
Yuan, Jiann S., "Modelling Of Gaas Mesfet Output Conductance And Transconductance Frequency Dispersion" (1993). Scopus Export 1990s. 833.
https://stars.library.ucf.edu/scopus1990/833