Title
Effect Of Base Profiles On The Forward Transit Time Of The Bipolar Transistors In Bicmos Circuits
Abstract
Effect of the base doping profile on the base and the emitter transit time of the bipolar transistors (BJTs) in BiCMOS circuits has been presented. Comparing the uniform base profile with the exponential base profile in low injection, the uniform base profile gives a lower base transit time for a given base resistance and peak base concentration, while the exponential base profile gives a lower base transit time for a given base resistance and base width at a large base width. At high injection the uniform base profile always gives the minimum base transit time. The uniform base doping profile is the optimal profile for BiCMOS logic at which the bipolar transistors are operated in high injection.
Publication Date
1-1-1993
Publication Title
1993 University/Government/Industry Microelectronics Symposium
Number of Pages
120-124
Document Type
Article; Proceedings Paper
Identifier
scopus
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0027153857 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0027153857
STARS Citation
Yuan, Jiann Shiun; Yeh, Chune Sin; and Gadepally, Bhaskar, "Effect Of Base Profiles On The Forward Transit Time Of The Bipolar Transistors In Bicmos Circuits" (1993). Scopus Export 1990s. 825.
https://stars.library.ucf.edu/scopus1990/825