Title
Evaluation Of Rf-Stress Effect On Class-E Mos Power-Amplifier Efficiency
Keywords
Breakdown (BD); Class-E power amplifier (PA); MOS devices; Power efficiency; RF stress
Abstract
RF-stress effects on MOS power-amplifier performance are studied. The class-E power-amplifier power efficiency as a function of breakdown (BD) location has been evaluated. The power efficiency degrades with gate-oxide RF stress due to increased gate leakage current and reduced output voltage. The degradation is enhanced when the BD location is closer to the drain side than the source side. © 2008 IEEE.
Publication Date
1-1-2008
Publication Title
IEEE Transactions on Electron Devices
Volume
55
Issue
1
Number of Pages
430-434
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TED.2007.911092
Copyright Status
Unknown
Socpus ID
37749016604 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/37749016604
STARS Citation
Yuan, J. S. and Ma, J., "Evaluation Of Rf-Stress Effect On Class-E Mos Power-Amplifier Efficiency" (2008). Scopus Export 2000s. 10595.
https://stars.library.ucf.edu/scopus2000/10595