Title

Controlled Ion Migration Tuning Of Semiconductor Electrical Properties

Abstract

A semiconductor that contains dopants can be considered as a mixed electronic-ionic conductor, with the dopants as mobile ions. The temperature range in which this normally becomes true is far from where the opto-electronic properties of the material are of interest. However, exceptions exist. In this chapter we consider several important cases. Dopant diffusion and drift are relevant not only for materials such as Si:Li, used in radiation detectors, but also for other semiconductors, ranging from II-VIs and related compounds, such as CdTe, (Hg,Cd)Te and CuInSe2, to III-Vs, including GaN, and potential high temperature semiconductors, such as SiC. Better understanding of the phenomena is important also because of the implications that it has for device miniaturization, as dopant diffusion and drift put chemical limits to device stability. Such understanding can also make dopant electromigration useful for low-temperature doping.

Publication Date

1-1-2001

Publication Title

Diffusion and Defect Data. Pt A Defect and Diffusion Forum

Volume

191

Number of Pages

61-97

Document Type

Article

Personal Identifier

scopus

Socpus ID

0035079591 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035079591

This document is currently not available here.

Share

COinS