Title
Fixed Wavelength Selection For The Far-Infrared P-Ge Laser Using Patterned Silicon Etched Mirrors
Keywords
Far-infrared; p-Germanium; Semiconductor Laser; Sub-millimeter; Terahertz; Tunable Laser
Abstract
An etched silicon gold plated lamellar mirror is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser, facilitating spectroscopic applications. The depth of the selective mirror, which defines the laser operation wavelength, can be precisely controlled during the etching process. The third-order Fabry-Perot resonance of this selector yields an active cavity finesse of at least 0.06.
Publication Date
11-26-2003
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
5085
Number of Pages
119-125
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.485790
Copyright Status
Unknown
Socpus ID
0242635677 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0242635677
STARS Citation
Du Bosq, T. W.; Peale, R. E.; and Nelson, E. W., "Fixed Wavelength Selection For The Far-Infrared P-Ge Laser Using Patterned Silicon Etched Mirrors" (2003). Scopus Export 2000s. 1498.
https://stars.library.ucf.edu/scopus2000/1498