Rf Circuit Design In Reliability
A methodology for designing reliable RF circuits is proposed. A model to predict hot carrier and soft breakdown effects on CMOS device parameters in RF circuits is developed. Hot carrier and soft breakdown effects are evaluated experimentally with 0.16 μm CMOS technology. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low noise amplifier and voltage-controlled oscillator performance. Two design techniques to build reliable RF circuits are proposed and verified.
IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Number of Pages
Article; Proceedings Paper
Source API URL
Xiao, Enjun and Yuan, J. S., "Rf Circuit Design In Reliability" (2003). Scopus Export 2000s. 1635.