Title

Laser Direct Write Doping Of Wide-Bandgap Semiconductor Materials

Abstract

Gas immersion laser doping (GILD) and molten precursor (predeposition and drive-in diffusion) laser doping are demonstrated in SiC. Trimethylaluminum (TMAI) and nitrogen are the precursors used to produce p-type and n-type SiC, respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500-600 nm) and shallow (50 nm) junctions, respectively. Laser-assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a 150 nm p-type doped junction is fabricated in semi-insulating 6H-SiC and n-doped 4H-SiC wafers. This technique is used to p-type dope Mg in single crystal GaN to concentrations up to 1021 cm-3 and 5μm penetration., respectively, are achieved using various laser doping techniques. Laser direct write (LDW) conversion provides metallization to process Ohmic and rectifying contacts in these doped semiconductors, without the addition of metal, in order to conduct junction and device testing.

Publication Date

1-1-2003

Publication Title

IEEE International Symposium on Compound Semiconductors, Proceedings

Volume

2003-August

Number of Pages

1-7

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ISCSPC.2003.1354423

Socpus ID

84979285152 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84979285152

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