Title

Rf Circuit Performance Degradation Due To Hot Carrier Effects And Soft Breakdown

Abstract

A methodology to systematically study hot carrier and soft breakdown effects on RF circuits is proposed, and verified with a 2.45GHz low noise amplifier (LNA) and a 1GHz voltage controlled oscillator (VCO). MOSFETs of 0.16 μm technology are stressed, and DC and RF parameters are extracted and used for BERT and SpectreRF simulations to give RF circuit performance degradations due to HC and SBD effects with respect to operation time. Design guidelines for more reliable RF circuits are given after simulation and analysis.

Publication Date

12-1-2002

Publication Title

Midwest Symposium on Circuits and Systems

Volume

1

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0036976898 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0036976898

This document is currently not available here.

Share

COinS