Title

Mos Rf Reliability Subject To Dynamic Voltage Stress - Modeling And Analysis

Keywords

Breakdown (BD); Circuit reliability; Hot carriers (HCs); MOS devices; Power amplifiers; Stress

Abstract

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance. © 2005 IEEE.

Publication Date

8-1-2005

Publication Title

IEEE Transactions on Electron Devices

Volume

52

Issue

8

Number of Pages

1751-1758

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2005.852546

Socpus ID

23344449696 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/23344449696

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