Title

Voltage Stress-Induced Hot Carrier Effects On Sige Hbt Vco

Abstract

This paper presents the hot carrier (HC) induced performance degradation in a 10 GHz voltage controlled oscillator (VCO) with SiGe heterojunction bipolar transistors (HBTs). SiGe device characteristics due to HC stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured data are used in Cadence SpectreRF simulation to verify the HC effect on the VCO. The VCO shows significant vulnerability to hot carriers. © 2005 Elsevier Ltd. All rights reserved.

Publication Date

9-1-2005

Publication Title

Microelectronics Reliability

Volume

45

Issue

9-11

Number of Pages

1402-1405

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2005.07.026

Socpus ID

24144461696 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/24144461696

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