Title

Chemical Mechanical Planarization Of Copper: Role Of Oxidants And Inhibitors

Abstract

Investigations were carried out to understand the effect of hydrogen peroxide as an oxidant and benzotriazole (BTA) as an inhibitor on the chemical mechanical planarization (CMP) of copper. Cu-CMP was studied using electrochemistry and removal rate measurements in solutions containing the oxidizer and the inhibitor. In the presence of 0.1 M glycine, the copper removal rate was high in the solution containing 5% H2O2 at pH 2 because of a Cu-glycine complexation reaction. The dissolution rate of Cu increased due to the formation of the highly soluble Cu-glycine complex in the presence of hydrogen peroxide. Addition of 0.01 M BTA in the solution containing 0.1 M glycine and 5% H2O2 at pH 2 exhibited a reduction in the Cu removal rate by the formation of a Cu-BTA complex on the surface of copper that inhibits the dissolution. X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy investigations revealed the formation of a Cu-glycine complex, which aided the understanding of the mechanism of Cu-oxidant-inhibitor interaction during polishing. © 2004 The Electrochemical Society.

Publication Date

12-1-2004

Publication Title

Journal of the Electrochemical Society

Volume

151

Issue

11

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/1.1806395

Socpus ID

10944221364 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/10944221364

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