Title
Hot Carrier-Induced Degradation On High-K Trnasistors And Low Noise Amplifier
Keywords
Circuit reliability; Hafnium dioxide; High-k dielectric; Noise figure; Radio frequency; S-parameters
Abstract
Channel hot carrier-induced DC and RF performance degradations in 60 nm high-k nMOSFETs are examined experimentally. The normalized degradation in RF parameters can be predicted using normalized transistor parameters. Good agreement between the analytical predictions and simulation results is obtained. ©2006 IEEE.
Publication Date
12-1-2006
Publication Title
IEEE International Reliability Physics Symposium Proceedings
Number of Pages
707-708
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/RELPHY.2006.251335
Copyright Status
Unknown
Socpus ID
34250707931 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/34250707931
STARS Citation
Yu, Chuanzhao and Yuan, J. S., "Hot Carrier-Induced Degradation On High-K Trnasistors And Low Noise Amplifier" (2006). Scopus Export 2000s. 7714.
https://stars.library.ucf.edu/scopus2000/7714