Title

Study Of Performance Degradations In Dc-Dc Converter Due To Hot Carrier Stress By Simulation

Abstract

The hot carrier effects on the 0.25 μm high voltage LDMOS has been examined by the accelerated stress experiment. Although the model parameters changed slightly, the switching performances degraded significantly, which have been simulated with the compact models extracted from the test devices by ICCAP. A full bridge DC-DC converter with the compact models was proposed in Cadence SpectreRF. The simulated results show that the efficiency of the full bridge DC-DC converter degraded significantly due to the hot carrier effects. © 2006.

Publication Date

9-1-2006

Publication Title

Microelectronics Reliability

Volume

46

Issue

9-11

Number of Pages

1840-1843

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2006.07.079

Socpus ID

33747762255 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33747762255

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